The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
May. 26, 1999
Applicant:
Inventor:
Kunihiko Nagase, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438725 ; 438723 ; 438724 ; 438744 ;
Abstract
A method of fabricating a semiconductor device includes the steps of forming a resist pattern on a conductor layer, exposing the resist pattern to any of a plasma of a rare gas, a plasma of a mixture of a rare gas and a fluorine-containing gas, and a plasma of N.sub.2, and applying a dry etching process to the conductor layer while using the resist pattern as a mask.