The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Jul. 27, 1998
Shye-Lin Wu, Hsinchu, TW;
Acer Semiconductor Manufacturing Inc., Hsinchu, TW;
Abstract
The present invention is a method of fabricating void-free and volcano-free tungsten plugs. A silicon film was formed over contact hole surfaces for restricting the reflow of a dielectric layer. A titanium film is formed over the silicon layer. By performing a thermal process to the silicon layer and the titanium layer in a nitride-containing environment, the etching damage to the substrate can be recovered and a silicon silicide and a titanium nitride can be formed. The contact resistance of plugs can be significantly reduced, when compared with known technology. The undesired formation of voids and volcano can be eliminated. The method can be employed to fabricate defect-free advanced ULSI devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile