The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Dec. 22, 1998
Kazumi Saito, Tokyo, JP;
NEC Corporation, Tokyok, JP;
Abstract
In a semiconductor device manufacturing method, a gate insulating film is formed on a silicon substrate, a conductive film made of a conductive material is formed on a insulating film, an anti-reflecting coating made of an organic material is formed on the conductive film, a photosensitive resist film is formed on the anti-reflecting coating, a predetermined optical image on the resist film is developed by exposure to form a resist pattern, the anti-reflecting coating is then selectively removed by dry etching using a plasma of a gas mixture containing oxygen gas, a reactive gas, and an inert gas, while using the resist pattern as a mask, thereby forming a pattern, and the conductive film is etched by using the resist pattern as a mask, thereby forming an electrode.