The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2000

Filed:

Jul. 21, 1998
Applicant:
Inventors:

Frederick Albert Flitsch, Cornwall, NY (US);

Min-Su Fung, Lagrangeville, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438466 ; 438468 ; 438787 ; 324765 ;
Abstract

A semi conductor manufacturing process including uniform negative polarity wafer charging to remove or immobilize alkali ions such that the device becomes immune to their presence. The wafer is charged with a corona discharge at a 1MV/cm-2MV/cm bias field and low temperature (200.degree. C.-300.degree. C.) heating to bring mobile ions to the wafer's surface. Surface mobile ions are removed with a deionized (DI) water rinse or a standard sequential wafer wet cleaning step, immobilized with a normal gate (polysilicon) or metal contact formation step or both, thereby effectively removing mobile ions from the semiconductor structure.


Find Patent Forward Citations

Loading…