The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Jul. 10, 1997
Naoyuki Shinmura, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of fabricating a semiconductor device is provided which requires less distance allowance between gate electrodes and a contact hole, and which can therefore readily promote micro-fine patterning. A gate insulating film, conductive films to be used as material for gate electrodes, and a mask insulating film to be used as an etching mask are sequentially formed in stack on a surface of a semiconductor substrate. The mask insulating film and the conductive films are processed into a gate electrode pattern. An interlayer insulation film is deposited to fill a space between adjacent stacks of the mask insulating film and gate electrodes. The interlayer insulation film is selectively etched relative to the mask insulating film, thereby exposing sides of the mask insulating film. Side wall films are formed on the exposed portions of sides of the mask insulating film. The interlayer insulation film is selectively etched relative to the mask insulating film and side wall films, a contact hole being thereby formed.