The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
Oct. 15, 1997
Masayuki Endo, Osaka, JP;
Hiromi Ohsaki, Niigata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
A surface of a semiconductor substrate of silicon is supplied with 4-trimethylsiloxy-3-penten-2-one serving as a surface treatment agent. Thus, H in OH groups existing on the surface of the semiconductor substrate is substituted with Si(CH.sub.3).sub.3 (i.e., a trimethylsilyl group), resulting in producing CH.sub.3 COCH.sub.2 COCH.sub.3 (i.e., acetylacetone). Then, the surface of the semiconductor substrate is coated with a resist, exposed by using a desired mask, and subjected successively to PEB and development, thereby forming a resist pattern thereon. Since the surface of the semiconductor substrate is treated with 4-trimethylsiloxy-3-penten-2-one, the surface of the semiconductor substrate is made to be hydrophobic, so that the adhesion of the semiconductor substrate can be improved. As a result, the resultant resist pattern has a satisfactory shape free from peeling.