The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
May. 09, 1996
Bernardo Martinez-Tovar, Albuquerque, NM (US);
John A Montoya, Albuquerque, NM (US);
SCB Technologies, Inc., Albuquerque, NM (US);
Abstract
A device, e.g., an explosive-initiation device (24) includes a semiconductor bridge device (10) comprising semiconductor pads (14a, 14b) separated by an initiator bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b). The metallized lands (16a, 16b) each comprise a titanium base layer (18), a titanium-tungsten intermediate layer (20) and a tungsten top layer (22). This multilayer construction is simple to apply, provides good adhesion to the semiconductor (14) and enhanced semiconductor bridge characteristics, and avoids the electromigration problems attendant upon use of aluminum metallized lands under severe conditions of no-fire tests and very low firing voltage or current levels. The semiconductor (14) may optionally be covered by a cap or cover (117) of a stratified metal layer similar or identical to the metallized lands (16a, 16b). A method of making the semiconductor bridge devices includes metal sputtering of titanium, then titanium plus tungsten and then tungsten onto an appropriately masked semiconductor surface to attain the multilayer metallized lands (16a, 16b) and/or cover (117) of the invention.