The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
Jan. 06, 1999
Joseph Brian Seiler, Penn Township, Berks County, PA (US);
Bryan Phillip Segner, Upper Macungie, Lehigh County, PA (US);
Michael Geva, Allentown, PA (US);
Cheng-Yu Tai, Upper Macungie Township, Lehigh County, PA (US);
Erin Kathleen Byrne, Lower Alsace Township, Berks County, PA (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
A method for altering a dopant front profile of a dopant in a wafer is disclosed. An initial wafer is provided with an upper doped layer and a lower undoped layer. An oxide layer is grown over a portion of the wafer while a second portion of the wafer remains oxide-free. The wafer is then exposed to a substantially non-growth enhancement diffusion environment that contains the dopant at a given flow rate, but lacks additional materials which would cause growth on the exposed portions of wafer. After a predetermined amount of diffusion is allowed to occur, the wafer is removed from the diffusion environment and the oxide layer is removed.