The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2000
Filed:
Sep. 26, 1996
Fujitsu Limited, Kawasaki, JP;
Abstract
The present invention relates to a metallization technique of a semiconductor device, more specifically to a semiconductor device having a wiring or plug of a suitable structure for high integration and a method for fabrication of the semiconductor device. The semiconductor device comprises a base substrate 10; an inter-layer insulation film 20 including a first insulation film 16 formed on the base substrate and a second insulation film 18 formed on the base substrate, and having a contact hole 22 which reaches the base substrate 10; and a conducting film 24 formed on an inside wall and a bottom of the contact hole 22, a width of the contact hole in the first insulation film 16 being larger than a width of the contact hole 22 in the second insulation film 18. The conducting film 24 on the inside wall of the contact hole 22, and the conducting film 24 on the bottom of the contact hole 22 is uninterrupted on a boundary.