The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2000

Filed:

Mar. 24, 1997
Applicant:
Inventor:

Asim A Selcuk, Cupertino, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257534 ; 257532 ; 257903 ; 257904 ;
Abstract

A static random access memory (SRAM) cell having increased cell capacitance at the storage nodes utilizes a capacitive structure disposed in a trench. The capacitive structure includes an oxide liner disposed underneath two polysilicon plates. The polysilicon plates are each connected to drains of lateral transistors associated with the SRAM cell. The capacitive plates are deposited as a conformal layer polysilicon and then anisotropically etched to form plates on the side walls of the trench. A dielectric material such as silicon dioxide may be deposited between the polysilicon plates in the trench. The capacitor structures are provided between first and second N-channel pull down transistors associated with the SRAM cell.


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