The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2000
Filed:
Jul. 10, 1998
Applicant:
Inventors:
Kunio Takeuchi, Jyoyo, JP;
Nobuhiko Hayashi, Osaka, JP;
Yasuhiko Nomura, Moriguchi, JP;
Kouji Tominaga, Hirakata, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 99 ; 257754 ;
Abstract
The present invention provides an electrode making good ohmic contact with an n-type nitride semiconductor without requiring heat treatment at high temperature, wherein an aluminum layer, a silicon layer, a nickel layer and a gold layer are laminated in this order on an n-type gallium nitride based semiconductor, to form an n-type electrode.
Takeuchi, Kunio. (2000). Electrode of n-type nitridide semiconductor, semiconductor device having (U.S. Patent No. 6130446). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6130446
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile