The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2000
Filed:
May. 03, 1999
Pei-Wei Tsai, Hsin-Chu Hsien, TW;
Hua-Jen Tseng, Hsin-Chu Hsien, TW;
Dong-Tay Tsai, Kaohsiung, TW;
Chih-Hsien Chang, Taipei Hsien, TW;
Mosel Vitelic Inc., Hsin-Chu, TW;
Abstract
The present invention relates to an ion source chamber of a high energy implanter. The ion source chamber comprises a main chamber for generating ions for ion implantation, a vent-pipe having two open ends, one end of the vent-pipe being connected to the main chamber for releasing air from the main chamber, a releasing valve connected to another end of the vent-pipe for releasing the air in the main chamber when the pressure of the air in the main chamber exceeds a predetermined pressure, and a filtering device installed between the vent-pipe and the releasing valve for filtering impurities contained in the air carried by the vent-pipe so as to prevent the impurities from falling into the releasing valve.