The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2000

Filed:

Nov. 23, 1998
Applicant:
Inventors:

Takayuki Ambe, Kawasaki, JP;

Ichiro Honjo, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
250310 ; 250397 ;
Abstract

To miniaturize a secondary-electron detector, a ring-shaped secondary-electron emissive material layer 44A is formed on a ring-shaped base 41 having a round hole 41a, via a ring-shaped insulating layer 42A and a ring-shaped high resistance layer 43A. Similarly, a ring-shaped secondary-electron emissive material layer 44B is formed on a ring-shaped base 33 having a round hole 33a, via a ring-shaped insulating layer 42B and a ring-shaped high resistance layer 43B. A arc-shaped multiplied-electron collecting electrode 461 is joined between the insulating layers 42A and 42B outside the secondary-electron emissive material layer 44B. A porous secondary-electron multiplication substance may be filled between opposed bases instead of the secondary-electron emissive material layers 44A and 44B, and an optical fiber coated with phosphor may be used instead of the electrode 461.


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