The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2000
Filed:
Apr. 28, 1998
Kazuyo Nakamura, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In a solar cell, a crystal defect layer by ion implantation or an amorphous layer by ion implantation is formed between p type diffusion layers provided in an island-like manner at a side opposite to a light receiving surface of a low concentration p type semiconductor single crystalline substrate. The element of the ion implantation may be at least one selected from the group consisting of hydrogen, silicon, germanium, fluorine, oxygen and carbon. The constituent substance of the semiconductor substrate, such as Si is preferably used for the ion implantation. In such a solar cell structure having the crystal defect or amorphous layer, relatively long wavelength light that could not effectively be utilized in the prior art solar cell may be utilized so that the photoelectric conversion efficiency may be improved.