The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2000
Filed:
Oct. 05, 1998
Jae-Hee Ha, Choongcheongbuk-Do, KR;
LG Semicon Co., Ltd., Choongcheongbuk-Do, KR;
Abstract
An interconnection fabricating method for a semiconductor device includes the steps of forming an interconnection layer on a semiconductor substrate, forming a first photoresist layer on the interconnection layer, forming an insulation layer on the first photoresist layer, forming a second photoresist layer pattern on the insulation layer, sequentially etching the insulation layer and the first photoresist layer to obtain an insulation layer pattern and a first photoresist layer pattern, and removing the second photoresist layer pattern, removing the insulation layer pattern using dry etching, and forming an interconnection layer pattern by selectively etching the interconnection layer.