The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2000
Filed:
Mar. 16, 1999
Hsin-Kun Chu, Hsinchu Hsien, TW;
United Integrated Circuits Corp., Hsinchu, TW;
Abstract
A method of fabricating a capacitor is described. A dielectric layer is formed on a substrate. A node contact opening is formed in the dielectric layer to expose a portion of the substrate. A conductive layer is formed on the dielectric layer to cover the node contact opening. A ring trench is formed in the conductive layer above the node contact opening. An oxide layer is formed to fill the ring trench. An etching stop layer is formed to cover the oxide layer, the conductive layer encircled by the oxide layer, and a portion of the oxide layer beside the oxide layer. The etching stop layer defines a capacitor area. The conductive layer exposed by the etching stop layer is removed until the dielectric layer is exposed. The oxide layer and the etching stop layer are removed to expose the remaining conductive layer. A capacitor dielectric layer and a top electrode are formed in sequence to cover the remaining conductive layer.