The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2000

Filed:

Jul. 08, 1998
Applicant:
Inventor:

Yoshihiro Seguchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36523003 ; 3652257 ; 36523001 ; 36523002 ; 36523003 ; 365200 ; 365 63 ; 711170 ; 711171 ; 711172 ; 711173 ;
Abstract

A memory capacity switching method for switching capacities of an accessible memory in a semiconductor device 1 which comprises on a single chip the memory 2, a capacity switching signal generating circuit 4 for generating a capacity switching signal, and a control circuit 5 for switching capacities of the memory on the basis of the capacity switching signal. The method comprises the step of setting the capacity switching signal from the capacity switching signal generating circuit 4 either to 0 or to 1 causing the control circuit to switch the memory capacities as needed. The method and the semiconductor device for use therewith combine to shorten the time required for semiconductor device development and to reduce costs in fabricating the device.


Find Patent Forward Citations

Seguchi, Yoshihiro. (2000). Memory capacity switching method and semiconductor device to which the (U.S. Patent No. 6128245). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6128245

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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