The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2000
Filed:
Nov. 23, 1999
Hwi-Taek Chung, Kyunggi-do, KR;
Samsung Electronics. Co., Ltd., Suwon, KR;
Abstract
Disclosed herein is a nonvolatile semiconductor memory device which comprises a voltage level sensing circuit for detecting whether a word line voltage and a bit line voltage are boosted up to their target levels for a program operation. When the voltages are boosted up to the target levels, the voltage level sensing circuit generates a pulse signal for indicating that the word line and bit line voltages are sufficiently boosted up to the target levels. The nonvolatile semiconductor memory device realized according to this scheme can reduce a program time when it is implemented using the higher power supply voltage. Therefore, optimized program time of the memory device according to the present invention is secured.