The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2000
Filed:
Mar. 23, 1999
Toshihiro Sasai, Kyoto, JP;
Youichi Nakasone, Ibaraki, JP;
NuCORE Technology, Inc., Santa Clara, CA (US);
Abstract
A semiconductor memory device includes a memory cell and first and second electrodes. The memory cell has a floating gate formed on a semiconductor substrate via a gate insulating film to be insulated from a remaining part, and a control gate formed on the floating gate via an isolation insulating film. The first electrode is formed on the floating gate via a first insulating film in a region of the floating gate except for a channel region for constituting the memory cell. The second electrode is formed on the floating gate via a second insulating film in a region of the floating gate except for the channel region for constituting the memory cell. When a predetermined voltage is applied to the first and second electrodes, a tunnel current flows through the first and second insulating films.