The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2000

Filed:

Sep. 23, 1999
Applicant:
Inventors:

Niichi Itoh, Tokyo, JP;

Yasunobu Nakase, Tokyo, JP;

Tetsuya Watanabe, Tokyo, JP;

Chikayoshi Morishima, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365 51 ; 365 51 ; 365 52 ; 36523003 ; 365210 ;
Abstract

Provided is a semiconductor memory having a layout structure in which a memory cell has excellent patterning controllability. A pattern of element components (active regions 10 to 15 and 21 to 23 and polysilicon regions 31 to 42) of a memory cell for one memory cell unit of a memory cell array region 1 is identical to that of a dummy cell of a peripheral dummy cell region 3, and both patterns present a line symmetrical relationship with respect to a boundary line BC1. In addition, a pattern of the memory cell for one memory cell unit of the memory cell array region 1 is identical to that of a dummy cell of a power wiring region 2, and both patterns present a line symmetrical relationship with respect to a boundary line BC2.


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