The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2000
Filed:
Mar. 05, 1993
Gregory C Smith, Garland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A process for forming a smooth conformal refractory metal film on an insulating layer having a via formed therein. This process provides extremely good planarity and step coverage when used to form contacts in semiconductor circuits and, in addition, offers improved wafer alignment capability as well as enhanced reliability which result from the smooth surface morphology. The process includes forming contact openings through an insulating layer to a semiconductor substrate; depositing a first blanket layer of titanium using deposition conditions that provide a conformal film that exhibits good step coverage at the contact opening; and forming a second blanket layer of titanium using deposition conditions that provide reduced surface asperity height. The process is ideally suited to forming an electrical interconnection system for semiconductor integrated circuit devices such as static or dynamic random access memories and is particularly useful in VLSI devices that incorporate multiple levels of interconnect.