The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2000
Filed:
Apr. 05, 1999
Applicant:
Inventor:
Donald Ray Disney, Kokomo, IN (US);
Assignee:
Delco Electronics Corporation, Kokomo, IN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257338 ; 257327 ; 257350 ; 257 67 ;
Abstract
A process for integrating a vertical power device, such as an IGBT device, with suitable control circuitry, such as circuitry that provides self-protection from over-temperature (OT), over-voltage (OV) and over-current (OC) conditions. The process yields a vertical power device that is monolithically integrated with, and dielectrically isolated from, its control circuitry with the use of wafer-bonded silicon-on-insulator (SOI) material that yields a buried oxide layer. The process includes simultaneous fabrication of the power device below the buried oxide layer and its control circuitry above the buried oxide layer, in the SOI layer.