The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2000
Filed:
Mar. 23, 1999
Robert R Schumaker, Los Gatos, CA (US);
California Molecular Electronics, Corp., San Jose, CA (US);
Abstract
A procedure is disclosed for assembly of novel two-sided monolayer or multilayer device architectures out of self-assembly or self-organizing amphiphilic compounds derived from molecules that undergo a type of valence tautomerization known as asymmetric narcissistic reactions. The two-sided monolayer architectures are constructed by Langmuir-Blodgett (LB) transfer or self-assembly (SA) techniques while the multilayer architectures are formed by Y-type LB depositions, where the two layers or bilayers of the assemblies are alternate depositions of mirror-image forms of the amphiphiles. The resulting three-dimensional supramolecular assemblies described herein are uniquely capable of commutation between two non-centrosymmetric states which have, on a macroscopic scale, an optically antipodal relationship and a third central symmetric state which is, accordingly, optically racemic. The inventive architectures are expected to be useful for constructing a variety of opto-electronic devices for application as chemical sensors or for the transmission, modulation, storage, or processing of information.