The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2000
Filed:
Jan. 20, 1999
Byung-Ryul Ryum, Daejeon, KR;
Soo-Min Lee, Daejeon, KR;
Deok-Ho Cho, Daejeon, KR;
Tae-Hyeon Han, Daejeon, KR;
Electronics and Telecommunications Research Insititute, Daejeon, KR;
Abstract
The present invention relates to a metal silicon field effect transistor (MOSFET), and more particularly to a MOSFET, using a Si or SiGe channel to effectively adjust threshold voltage. The transistor according to the present invention can solve the problems, such as the punch-through caused by the short distance between the source region and the drain region, the decrease of the breakdown voltage between the source region and the drain region and the leakage current flowing into the bulk region beneath the channel due to the drain-induced barrier lowering. Furthermore, because the source region and the drain region are isolated from the semiconductor substrate by the lower insulation layer, the removal of the parasite junction capacitor speed up the transistor.