The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2000
Filed:
Apr. 29, 1998
Stefan Bauer, Pfefelbach, DE;
Wolfgang Herbst, Konstanz-Egg, DE;
Bernd Schroeder, Kaiserlautern, DE;
Angewandte Solarenergie-ASE GmbH, Alzenau, DE;
Abstract
In a thin-film solar cell having at least a p-type layer, an intrinsic layer of amorphous silicon and an n-type layer (p-i-n structure), the intrinsic layer has on the interface with the p-type layer an intrinsic interlayer with lower hydrogen content and greater density than the remaining intrinsic layer. The intrinsic layer is deposited on the p-type layer thermocatalytically by the hot wire method, the temperature of the filament being adjusted for controlling the layer properties, and the temperature of the substrate being less than 300.degree. C. The hot wire method can be conducted with an evacuable chamber in which a tantalum wire subjected to at least one weight is mounted in a meander shape at a distance from the substrate holder.