The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2000
Filed:
Jul. 22, 1999
Chih-Jung Wang, Hsinchu, TW;
Lu-Min Liu, Hsinchu, TW;
UTEK Semiconductor Corp, Hsinchu, TW;
Abstract
A method of fabricating an unlanded via. A substrate has a metal layer formed thereon and an ARC layer is formed on the metal layer. A liner dielectric layer is formed on the ARC layer and the sidewall of the metal layer, and an insulating material layer is formed on the insulating dielectric layer. The insulating material layer is then etched back, so a surface of the insulating material layer lower than the ARC layer surface is formed. Thereafter, a protective layer is formed on the insulating material layer and the metal layer, in which the protective layer is different from the liner dielectric layer. An IMD layer is formed on the protective layer. Using the liner dielectric layer as an etching stop layer, the IMD layer and the protective layer are patterned, and then the liner dielectric layer on the metal layer is removed, such that an unlanded via opening is formed.