The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2000

Filed:

Nov. 10, 1998
Applicant:
Inventor:

Kazumi Sugai, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; H01L / ;
U.S. Cl.
CPC ...
427250 ; 4272557 ; 4273833 ; 20419217 ; 438632 ; 438637 ; 438681 ; 438688 ;
Abstract

A method of forming an aluminum-based layer mainly including aluminum on a surface of an insulating layer and within a hole formed in the insulating layer. The method includes the steps of: carrying out a chemical vapor deposition to deposit the aluminum-based layer on the surface of the insulating layer and also to incompletely fill the hole to not less than 75% by volume of the hole by use of a source including at least one of alkyl groups and hydrogen so that a surface of the aluminum-based layer is terminated by the at least one of alkyl groups and hydrogen included in the source, and so that the surface of the aluminum-based layer is free of any natural oxide film; and carrying out a heat treatment, without formation of any natural oxide film on the surface of the aluminum-based layer, for causing a re-flow of the aluminum-based layer, whereby the at least one of alkyl groups and hydrogen promotes a migration of aluminum atoms on the surface of the aluminum-based layer.


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