The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2000
Filed:
Jul. 08, 1998
Paul Francis Glodis, Atlanta, GA (US);
Katherine Theresa Nelson, Gillette, NJ (US);
Kim Willard Womack, Duluth, GA (US);
Man Fei Yan, Berkeley Heights, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
Bubble-free core glass can be deposited at relatively high rate (e.g., >0.3 gm SiO.sub.2 /minute, preferably 0.6 gm SiO.sub.2 /minute or more) by MCVD if the deposition conditions are appropriately selected. For instance, a relatively high torch traverse speed, a relatively low sintering temperature, and/or relatively low gas flow rates can facilitate high rate deposition of bubble-free glass. By way of example, conditions are disclosed that yielded essentially bubble-free core glass (.DELTA.=0.35%) at a rate of 1 gm SiO.sub.2 /minute.