The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
Dec. 23, 1998
Samsung Electronics Co., LTD, , KR;
Abstract
There is provided a non-volatile memory device having a multi-bit cell structure. In the non-volatile memory device, a memory cell array includes a plurality of cells of a first conductivity type which has different threshold voltages and are arranged in a matrix on a semiconductor substrate. A bulk region of a second conductivity type opposite to the first conductivity underlies the memory cell array and receives a predetermined back bias voltage when a cell is driven. The threshold voltage difference between states can be sufficiently widened because a state having a high bulk concentration is highly susceptible to a body effect. Therefore, reduction of masks leads to process simplicity, reduced turnaround time, and improved process margin.