The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
Jun. 08, 1998
Applicant:
Inventors:
Naoyuki Taguchi, Tokyo, JP;
Susumu Ohi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 57 ; 257 72 ; 257347 ; 257348 ; 257349 ; 257350 ; 257351 ; 257352 ; 257353 ; 257354 ; 257355 ;
Abstract
A high-quality thin-film transistor array. The gate insulating film below the pixel electrode is etched off in its entirely or along a slit extending along a drain bus line in order to simultaneously remove the residual a-Si produced due to defective patterning. The insulating film is interposed between a drain bus line and a pixel electrode to form a boundary separating layer therebetween. The reject ratio is suppressed by reducing the occurrence of point defects of semi-bright spots, ascribable to capacitative coupling to the pixel electrodes as a result of interconnection of the residual a-Si produced by defective patterning to the drain bus line.