The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
Feb. 24, 1998
Shuichi Saito, Tokyo, JP;
NEC Corporation, , JP;
Abstract
The invention provides a method of fabricating a semiconductor device, including the steps of (a) depositing a titanium film over a silicon substrate, (b) depositing an amorphous silicon film on the titanium film, (c) carrying out first thermal annealing to form a first TiSi.sub.2 film over a resultant, (d) carrying out second thermal annealing to cause a single crystal silicon layer to grow in a region in which a source/drain region is to be formed, (e) successively removing the amorphous silicon film and the first TiSi.sub.2 film, and (f) forming a highly concentrated diffusion layer in the region, the diffusion layer having conductivity opposite to that of the silicon substrate. In accordance with the method, it is possible to form a salicided MOS transistor which includes a source/drain diffusion layer having shallow junction depth, and low-resistive source/drain regions.