The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2000

Filed:

Jul. 24, 1998
Applicant:
Inventors:

Katsue Kawakyu, Kawasaki, JP;

Masami Nagaoka, Ebina, JP;

Atsushi Kameyama, Ota-ku, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B / ;
U.S. Cl.
CPC ...
455 78 ; 455 82 ; 455 83 ; 333103 ;
Abstract

In order to minimize the chip area and improve the linear characteristics obtained when large signals are inputted, a high frequency switch device comprises first, second and third terminals (3, 4, 6); a first circuit composed of a first FET (11), and a first inductor (21) and a first capacitor (25) both connected with the first FET (11) in parallel to each other, one end of the first circuit being connected to the first terminal (3); and a second circuit composed of a second FET (12), and a second inductor (22) and a second capacitor (26) both connected with the second FET (12) in parallel to each other, one end of the second circuit being connected to the first circuit and the other end of the second circuit being connected to the second terminal (4). Further, the high frequency switch device is characterized in that a first control signal is applied to a gate of the first FET (11) via a resistance (31); a second control signal is applied to a gate of the second FET (12) via a resistance (33); the third terminal (6) is connected to a common junction point of the first and second circuits; and a predetermined potential is applied to the common junction point.


Find Patent Forward Citations

Kawakyu, Katsue. (2000). High frequency switch device, front end unit and transceiver (U.S. Patent No. 6118985). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6118985

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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