The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2000
Filed:
Dec. 01, 1995
Kiichi Hamamoto, Tokyo, JP;
Takashi Matsumoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of manufacturing a compound semiconductor integrated circuit having a portion at which compound semiconductor layers having different compositions from each other are continuously formed on a semiconductor substrate in a lateral direction includes the following steps. A substrate surface subjected to epitaxial growth is kept at partially different temperatures. Selective epitaxial growth is performed by vapor phase growth in this state to form the compound semiconductor layers having different compositions from each other. The surface structures forming the integrated circuit are created by lithography for localizing heating or cooling during growth of epitaxial layers.