The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2000
Filed:
Aug. 06, 1997
Applicant:
Inventors:
Joachim Bill, Ditzingen, DE;
Frederick F Lange, Santa Barbara, CA (US);
Thomas Wagner, Stuttgart, DE;
Fritz Aldinger, Oberaichen, DE;
Detlef Heimann, Stuttgart, DE;
Assignee:
Max-Planck-Gesellschaft zur Forderung DE, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 84 ; 117 90 ; 427249 ; 427255 ;
Abstract
Thin, single-crystal SiC films are obtained by means of a pyrolysis process, the substrate to be coated being covered with a carbonaceous polysilane, the adhering layer being pyrolyzed in an inert atmosphere and the amorphous layer of SiC obtained in this way being crystallized by maintaining it at a temperature of over 700.degree. C. Using a special variation of the process, it is easy to form doped SiC films. To this end the dopant is added in the form of a silane compound.