The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2000

Filed:

Aug. 28, 1997
Applicant:
Inventors:

Tadahiro Ohmi, Miyagi-ken, JP;

Ryosuke Dohi, Osaka, JP;

Koji Nishino, Osaka, JP;

Nobukazu Ikeda, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L / ; G01L / ;
U.S. Cl.
CPC ...
73715 ; 73720 ; 73726 ;
Abstract

A good quality passive-state film is formed on a gas-contact face of a diaphragm of a pressure detector using a sensor chip to prevent corrosion on, or water content emission from, or catalytic action at a gas-contact face, thereby improving production quality in a semiconductor manufacturing process and providing high accuracy pressure detection. The passive-state film is formed on the gas-contact face of the diaphragm when the diaphragm is mounted on a diaphragm base. The diaphragm base is then fixedly secured to a sensor base in which a sensor chip is housed and a pressure transmitting medium is sealed in a gap between the sensor base and the diaphragm base.


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