The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Jan. 11, 1999
Applicant:
Inventor:
Yasuhiro Ando, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518909 ; 36518518 ; 36518527 ;
Abstract
In a semiconductor memory device composed of a set of SRAM cells connected in common to one another through a word line and a common connection line, a substrate potential generation circuit is connected to the word line to supply the SRAM cells through the common connection line with a substrate potential determined by a selected or a non-selected state of the word line. The substrate potential is equal to a ground potential in the selected state or is put into a negative potential in the non-selected state. The substrate potential is given to each of drive transistors included in each SRAM to reduce a leak current.