The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
May. 15, 1998
Applicant:
Inventor:
Toshiyuki Tani, Hiji-machi, JP;
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257353 ; 257354 ; 257505 ; 257513 ; 257347 ; 257520 ; 257508 ; 257554 ;
Abstract
Prevents deterioration of the element characteristics of the gate voltage tolerance and the like which is caused by the metallic contaminants that are sealed in the element forming region at the time of applying a trench separator in a SOI substrate. Polysilicon 12 is formed on the side walls of the trench 5, and the metallic contaminants within the element forming region are collected in this polysilicon 12.