The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Mar. 31, 1998
Applicant:
Inventor:
K Nirmal Ratnakumar, San Jose, CA (US);
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257326 ; 257314 ; 36518518 ;
Abstract
An electrically erasable programmable read only memory (EEPROM) cell including a tunnel dielectric layer formed over a semiconductor substrate. The EEPROM cell may have a floating gate transistor and a select transistor. The floating gate transistor may have a floating gate formed over the tunnel dielectric and a control gate formed over the floating gate. The select transistor may have a first gate formed over the tunnel dielectric and a second gate formed over the first gate. The second gate may be electrically connected to the first gate.