The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Nov. 16, 1998
Applicant:
Inventors:
Yasuaki Hokari, Tokyo, JP;
Chihiro Ogawa, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257250 ; 257221 ; 257224 ; 257243 ; 257249 ; 257435 ;
Abstract
A dipping in potential well due to direct contact between transfer electrodes and metal wiring causes a drop in transfer efficiency through a CCD register. In order to eliminate or at least reduce the potential dipping, an N.sup.- -type impurity layer that functions as a CCD channel is formed with N.sup.-- -type impurity regions that have impurity concentration lower than that of the N.sup.- -type impurity layer. The N.sup.- -type impurity regions are located below transfer electrodes in alignment with contact apertures.