The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Mar. 19, 1998
Chih-Hsun Chu, Hsinchu, TW;
Tzu-Jin Yeh, ChungLi, TW;
Mosel Vitelic Inc., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device with raised source/drain. This method eliminates the problem which is often experienced when the shallow junction technique is applied, in which over-etching of the source/drain region during the contact etching and the salicide process can lead to current leakages. The improved method includes the steps of forming a buffer conductive blocks on the source/drain regions which increase the thickness of source/drain regions. A related semiconductor structure made by the method has a plurality of bi-flange shape side wall spacers by which the semiconductor structure not only elevates the doped regions, it also provides an improved capability to suppress the electric bridges between the gate electrode and source/drain regions, respectively.