The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2000

Filed:

May. 10, 1996
Applicant:
Inventors:

Gabriella Ghidini, Milan, IT;

Cesare Clementi, Busto Arsizio, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438258 ; 438201 ; 438264 ; 438287 ; 438275 ;
Abstract

The method described provides for the formation of thin thermal oxide on areas of a silicon die intended for memory cells and other components of the peripheral circuits of the memory. To improve the quality of the oxide of the cells essentially in terms of resistance to degradation due to the passage of charges through it during the operation of the memory, the method provides for a step for the high-temperature nitriding of the oxide. According to a variant, the nitrided oxide formed on the areas intended for the components of the peripheral circuits is removed and then formed again by a similar thermal oxidation treatment followed by high-temperature nitriding.


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