The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
May. 18, 1999
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A sputtering apparatus for manufacturing semiconductor devices, and a sputtering method using the same, allows for the formation of metal layers having good step coverage and good deposition rate. The sputtering apparatus for manufacturing semiconductor devices includes a process chamber; a target; a backing plate for the target; a cooling gas line on or in the backing plate, such that a cooling gas for cooling the target is circulated through the cooling gas line; and a cooling gas supply apparatus for supplying, discharging and recirculating cooling gas to and from the cooling gas line of the backing plate. The sputtering process is carried out with a high frequency power applied at 15 kW to 45 kW, argon gas supplied at 3 sccm to 10 sccm, and inner pressure in the process chamber at 0.1 mTorr to 1 mTorr. This sputtering apparatus does not require a collimator, therefore none of the particles generated when using a collimator are present to damage the wafers processed in this apparatus.