The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2000

Filed:

Nov. 20, 1996
Applicant:
Inventors:

Toshiki Shinmura, Tokyo, JP;

Hiroaki Yamada, Tokyo, JP;

Toshiyuki Ohta, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20419212 ; 20429812 ;
Abstract

Formation of metal thin films by collimate sputtering with high productivity and high bottom coverages. The bottom coverages by collimate sputtering are increased by using a target having a high sputtered-particle emission probability in the range of angles at which the collimator passage rate is high, without increasing the aspect ratio of the collimator, that is, without lowering the productivity.


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