The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Dec. 15, 1998
Jun-young Choi, Inchun, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A gas diffuser for semiconductor device fabrication has the form of a hermetic cylinder with a hollow formed therein and is provided with a gas inlet opened upward for the gas to flow into the hollow, and a disk-shaped diffusion plate disposed in the lower side thereof with a plurality of nozzles to direct and control the stream of the gas pouring out of the hollow. The thickness of the diffusion plate increases with radial distance from the center thereof, such that lengths of the nozzles through which the gas passes also increase with radial distance from the center of the diffusion plate. A reaction furnace has the gas diffuser disposed in an upper portion thereof, and a support plate for supporting the wafer disposed in a lower portion thereof. The distance from the surface of the wafer to the diffusion plate of the gas diffuser is half the radius of the wafer.