The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Oct. 01, 1998
Applicant:
Inventors:
Souroku Kawanishi, Saga, JP;
Makoto Itou, Amagasaki, JP;
Assignee:
Sumitomo Metal Industries, Ltd., Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 30 ; 117 32 ; 117917 ;
Abstract
A method of growing a single crystal, comprises pulling a single crystal from molten material in a crucible by the Czochralski method; simultaneously applying an axially symmetric, radial cusp magnetic field to the molten material; and simultaneously heating the crucible from both the bottom and the sides; where a ratio of the heating from the bottom of the crucible, q, to the total heating of the crucible, Q, is q/Q, and during the pulling the ratio q/Q changes. The concentration of oxygen in the pulling direction of the crystal may be accurately controlled, and is uniform.