Method for making a silicon single crystal wafer

Abstract

A silicon single crystal wafer having good device characteristics can be manufactured according to the Czochralski method without formation of any dislocation cluster within a crystal surface. Where a silicon single crystal having an oxygen concentration of less than 8.5.times.10.sup.17 atoms/cm.sup.3 (ASTM F1188-88) is manufactured, a radius of a latent zone of oxidation induced stacking defects ring-likely-distributed in the crystal surface is made within a range of 70% to 0% of a crystal radius, and a value of V/G (mm.sup.2 /.degree. C..multidot.minute) is controlled at a predetermined critical value or over at radial positions except an outermost periphery of the crystal when a pulling rate is taken as V (mm/minute), and a crystalline temperature gradient along the pulling axis is taken as G (.degree. C./mm). On the other hand, when a silicon single crystal having an oxygen concentration of not less than 8.5.times.10.sup.17 atoms/cm.sup.3 (ASTM F1188-88) is manufactured, a pulling rate is further set at 1.0 mm/minute or over. In the method for manufacturing the silicon single crystal wafer, it is preferred to calculate the crystalline temperature gradient G along the pulling axis through heat transfer calculation, set the critical value of V/G at 0.20 mm.sup.2 /.degree. C..multidot.minute, and control the value of V/G at a value larger than the critical value.