The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2000
Filed:
Sep. 14, 1998
Applicant:
Inventors:
Bruno Bonhoure, Grenoble, FR;
Veronique Tournier, Seyssinet-Pariset, FR;
Assignee:
STMicroelectronics S.A., Gentilly, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G / ;
U.S. Cl.
CPC ...
3613012 ; 361303 ; 3613061 ; 361311 ; 3613215 ; 438239 ;
Abstract
The present invention relates to a method of implementing an intermetallic capacitor in a multiple layer integrated circuit including, on a P-type substrate, at least five levels of metallization. The method includes letting remain, on either side of portions of end metallization levels of the capacitor, at least one portion of a biasable level distinct from the substrate and from the last metallization level, and biasing, at least above the capacitor and to the potential of the substrate, the two biasable portions.