The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2000
Filed:
Jul. 23, 1999
Steven J Laureanti, Lewisville, TX (US);
Nokia Networks Oy, Espoo, FI;
Abstract
An LDMOS RF amplifier having a bias voltage generated through feedback around an LDMOS sense transistor has a sense transistor, a current sensing circuit that monitors current in the sense transistor, and a bias voltage generation circuit controlled by an output of the current sensing circuit. The bias voltage from the bias voltage generation circuit is applied to the gates of both the sense transistor and an LDMOS RF power amplifier transistor. An AC-coupled RF input signal is applied through typical impedance-matching circuitry to the gate of the RF power amplifier transistor, and an AC-coupled output signal is tapped from, and power applied to, the drain of the RF power amplifier transistor through impedance matching circuitry of the type known in the art.