The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2000
Filed:
Mar. 23, 1998
Applicant:
Inventor:
Ryuichi Okamura, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257760 ; 257773 ; 257774 ;
Abstract
By assuming a symbol A for the contact depth, B for the diameter of the contact, C for the thickness of the underlay oxide to be formed between the barrier film and the semiconductor substrate, and D for the eave protrusion length of the barrier film the eaves being formed inside the contact when oxide wet etching is performed for removing natural oxide on the silicon and for reducing the contact resistance, the following relation is established,