The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2000
Filed:
Oct. 08, 1998
Takeshi Yoshida, Tokyo, JP;
Yusuke Otomo, Tokyo, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
A semiconductor photodetector includes a SOI substrate; a p-i-n photodiode provided on the SOI substrate, the p-i-n photodiode having an i-type semiconductor region; an insulator film provided on the i-type semiconductor region; and a depleting electrode provided on the insulator film. The semiconductor photodetector exhibits its function well with or without a power source for applying a voltage to the depleting electrode for depleting it. When the power source for depletion is used, the function of the device is realized at a voltage for depletion applied from the power source for depletion lower than a biasing voltage applied from a biasing power source.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile